共 50 条
- [1] Line edge roughness of developed resist at low dose electron beam exposure MICROPROCESSES AND NANOTECHNOLOGY 2001, DIGEST OF PAPERS, 2001, : 152 - 153
- [2] Line edge roughness of developed resist with low-dose electron beam exposure Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2002, 41 (6 B): : 4150 - 4156
- [3] Line edge roughness of developed resist with low-dose electron beam exposure JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2002, 41 (6B): : 4150 - 4156
- [4] Influence of electron scattering on resolution in low-dose electron-beam lithography JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2004, 43 (6B): : 3749 - 3754
- [5] A study of line edge roughness in chemically amplified resist for low energy electron-beam lithography MICROPROCESSES AND NANOTECHNOLOGY 2001, DIGEST OF PAPERS, 2001, : 302 - 303
- [6] A study of line edge roughness in chemically amplified resist for low energy electron-beam lithography 2001 International Microprocesses and Nanotechnology Conference, MNC 2001, 2001, : 302 - 303
- [8] Low energy electron beam lithography: pattern distortion by charge trapped in the resist Microelectron Eng, 1-4 (165-168):
- [9] Evaluation of aperture mask degradation in electron beam lithography using line edge roughness of resist patterns PHOTOMASK AND NEXT-GENERATION LITHOGRAPHY MASK TECHNOLOGY VIII, 2001, 4409 : 718 - 725
- [10] Edge roughness study of chemically amplified resist in low-energy electron-beam lithography using computer simulation Nakasugi, T., 1600, Japan Society of Applied Physics (41):