Line edge roughness of developed resist with low-dose electron beam exposure

被引：0
|
作者：
Kotera, Masatoshi [1 ]
Yamada, Takeshi [1 ]
Ishida, Yoshihisa [1 ]
机构：
[1] Department of Electronic Engineering, Osaka Institute of Technology, Omiya, Asahi-ku, Osaka 535-8585, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2002年 / 41卷 / 6 B期
关键词：
D O I：
10.1143/jjap.41.4150
中图分类号：
学科分类号：
摘要：
Photoresists
引用
收藏
页码：4150 / 4156
相关论文
共 50 条
  • [31] Impact of latent image quality on line edge roughness in electron beam lithography
    Yoshizawa, M
    Moriya, S
    Nakano, H
    Shirai, Y
    Morita, T
    Kitagawa, T
    Miyamoto, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2004, 43 (6B): : 3739 - 3743
  • [32] Analytic estimation and minimization of line edge roughness in electron-beam lithography
    Guo, Rui
    Lee, Soo-Young
    Choi, Jin
    Park, Sung-Hoon
    Shin, In-Kyun
    Jeon, Chan-Uk
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2015, 33 (06):
  • [33] The impact of latent image quality on line edge roughness in electron beam lithography
    Yoshizawa, M.
    Moriya, S.
    Nakano, H.
    Morita, T.
    Kitagawa, T.
    Miyamoto, Y.
    Dig. Pap. - Int. Microprocess. Nanotechnol. Conf., MNC, 1600, (108-109):
  • [34] Analysis of Dose-Pitch Matrices of Line Width and Edge Roughness of Chemically Amplified Fullerene Resist
    Kozawa, Takahiro
    Oizumi, Hiroaki
    Itani, Toshiro
    Tagawa, Seiichi
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2011, 50 (12)
  • [35] Depth profile and line-edge roughness of low-molecular-weight amorphous electron beam resists
    Hirayama, T
    Shiono, D
    Matsumaru, S
    Ogata, T
    Hada, H
    Onodera, J
    Arai, T
    Sakamizu, T
    Yamaguchi, A
    Shiraishi, H
    Fukuda, H
    Ueda, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2005, 44 (7B): : 5484 - 5488
  • [36] Influence of molecular weight of resist polymers on surface roughness and line-edge roughness
    Yamaguchi, T
    Yamazaki, K
    Namatsu, H
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2004, 22 (06): : 2604 - 2610
  • [37] RESIST EXPOSURE CHARACTERISTICS BY A FOCUSED LOW-ENERGY ELECTRON-BEAM
    SUGITA, A
    TAMAMURA, T
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (07) : 1741 - 1746
  • [38] Monte Carlo simulation of low-energy electron beam exposure in resist
    Song, Hui-Ying
    Zhang, Yu-Lin
    Kong, Xiang-Dong
    Weixi Jiagong Jishu/Microfabrication Technology, 2004, (04):
  • [39] ELECTRON-BEAM RESIST EDGE PROFILE SIMULATION
    NEUREUTHER, AR
    KYSER, DF
    TING, CH
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 686 - 693
  • [40] Influence of electron scattering on resolution in low-dose electron-beam lithography
    Kotera, M
    Niu, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2004, 43 (6B): : 3749 - 3754
12345