Highly uniform regrown In0.53Ga0.47As/AlAs/InAs resonant tunneling diodes on In0.53Ga0.47As

被引：0
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作者：
Osaka, Jiro [1 ]
Maezawa, Koichi [1 ,2 ]
Yokoyama, Haruki [1 ]
Yamamoto, Masafumi [1 ]
机构：
[1] NTT Syst. Electronics Labs., 3-1, Morinosato-Wakamiya, Atsugi-shi 243-0198, Japan
[2] Faculty of Engineering, Nagoya University, Furo-cho, Chigusa-ku, Nagoya-shi, 464-01, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1999年 / 38卷 / 2 B期
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页码：1204 / 1207
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