Highly uniform regrown In0.53Ga0.47As/AlAs/InAs resonant tunneling diodes on In0.53Ga0.47As

被引：0
|
作者：
Osaka, Jiro [1 ]
Maezawa, Koichi [1 ,2 ]
Yokoyama, Haruki [1 ]
Yamamoto, Masafumi [1 ]
机构：
[1] NTT Syst. Electronics Labs., 3-1, Morinosato-Wakamiya, Atsugi-shi 243-0198, Japan
[2] Faculty of Engineering, Nagoya University, Furo-cho, Chigusa-ku, Nagoya-shi, 464-01, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1999年 / 38卷 / 2 B期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：1204 / 1207
相关论文
共 50 条
  • [21] Inversion in the In0.53Ga0.47As metal-oxide-semiconductor system: Impact of the In0.53Ga0.47As doping concentration
    O'Connor, E.
    Cherkaoui, K.
    Monaghan, S.
    Sheehan, B.
    Povey, I. M.
    Hurley, P. K.
    APPLIED PHYSICS LETTERS, 2017, 110 (03)
  • [22] Impact ionisation coefficients of In0.53Ga0.47As
    Ng, JS
    David, JPR
    Rees, GJ
    Pinches, SM
    Hill, G
    IEE PROCEEDINGS-OPTOELECTRONICS, 2001, 148 (5-6): : 225 - 228
  • [23] Avalanche breakdown voltage of In0.53Ga0.47As
    Ng, JS
    David, JPR
    Rees, GJ
    Allam, J
    JOURNAL OF APPLIED PHYSICS, 2002, 91 (08) : 5200 - 5202
  • [24] ION-IMPLANTATION OF BE IN IN0.53GA0.47AS
    TABATABAIEALAVI, K
    CHOUDHURY, ANMM
    SLATER, NJ
    FONSTAD, CG
    APPLIED PHYSICS LETTERS, 1982, 40 (06) : 517 - 519
  • [25] In0.53Ga0.47As Triangular GAA MOSFETs
    Khaouani, Mohammed
    Kourdi, Zakarya
    2018 INTERNATIONAL CONFERENCE ON COMMUNICATIONS AND ELECTRICAL ENGINEERING (ICCEE), 2018, : 1 - +
  • [26] PSEUDOMORPHIC IN0.53GA0.47AS/ALAS/INAS RESONANT TUNNELING DIODES WITH PEAK-TO-VALLEY CURRENT RATIOS OF 30 AT ROOM-TEMPERATURE
    BROEKAERT, TPE
    LEE, W
    FONSTAD, CG
    APPLIED PHYSICS LETTERS, 1988, 53 (16) : 1545 - 1547
  • [27] LARGE ACTIVATION OF PRASEODYMIUM IN IN0.53GA0.47AS
    NOVAK, J
    HASENOHRL, S
    MALACKY, L
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1993, 8 (05) : 747 - 749
  • [28] Excess noise measurement in In0.53Ga0.47As
    Goh, YL
    Ng, JS
    Tan, CH
    Ng, WK
    David, JPR
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2005, 17 (11) : 2412 - 2414
  • [29] High Performance and Reliability Analysis of Implant Free Composite Channel In0.53Ga0.47As/InAs/In0.53Ga0.47As Delta-Doped MOSFET
    Mohanty, S. S.
    Mishra, S.
    Mohapatra, M.
    Mishra, G. P.
    IRANIAN JOURNAL OF SCIENCE AND TECHNOLOGY-TRANSACTIONS OF ELECTRICAL ENGINEERING, 2021, 45 (02) : 425 - 434
  • [30] DIFFUSION OF CD IN INP AND IN0.53GA0.47AS
    AYTAC, S
    SCHLACHETZKI, A
    JOURNAL OF CRYSTAL GROWTH, 1983, 64 (01) : 169 - 173
12345