Interfacial stability of an indium tin oxide thin film deposited on Si and Si0.85Ge0.15

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作者：
Ow-Yang, Cleva W.
Shigesato, Yuzo
Paine, David C.
机构：
[1] Max-Planck-Inst. fur Metallforschung, Seestrasse 92, 70174 Stuttgart, Germany
[2] Aoyama Gakuin University, College of Science and Engineering, 6-16-1 Chitosedai, Setagayaku, Tokyo 157-8572, Japan
[3] Brown University, Division of Engineering, Box D, Providence, RI 02912, United States
[4] SDL, Inc., 80 Rose Orchard Way, San Jose, CA 95134, United States
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| 1600年 / American Institute of Physics Inc.卷 / 88期
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