Optical Bleaching of Thin Film Ge on Si

被引：14

作者：

Sun, Xiaochen ^{[1
]}

Liu, Jifeng ^{[1
]}

Kimerling, Lionel C. ^{[1
]}

Michel, Jurgen ^{[1
]}

机构：

[1] MIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USA

来源：

SIGE, GE, AND RELATED COMPOUNDS 3: MATERIALS, PROCESSING, AND DEVICES | 2008年 / 16卷 / 10期

关键词：

D O I：

10.1149/1.2986848

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Thin film Ge on Si is a potential active material candidate for electrically pumped monolithically integrated Si-based light emitters. Theoretical analysis has shown that a combination of strain and n-type doping can modify the band structure of Ge;so that it exhibits direct bandgap properties. Direct band-to-band optical transition is observed from the room temperature photoluminescence at around 1550nm. An optical bleaching effect occurring in lock-in pump-probe measurements indicates a precursor to optical net gain.

引用

页码：881 / 889

页数：9

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