Physical modeling of transient enhanced diffusion in silicon

被引：0
|
作者：
Taniguchi, Kenji [1 ]
Saito, Tomoya [1 ]
Xia, Jianxin [1 ]
Kim, Ryangsu [1 ]
Aoki, Takenori [1 ]
Kobayashi, Hiroyuki [1 ]
Kamakura, Yoshinari [1 ]
机构：
[1] Osaka Univ, Osaka, Japan
来源：
International Symposium on VLSI Technology, Systems, and Applications, Proceedings | 1999年
关键词：
Annealing - Approximation theory - Atoms - Computer simulation - Crystal defects - Mathematical models - Semiconducting boron - Semiconductor superlattices - Thermal diffusion in solids;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Transient enhanced diffusion (TED) of boron atoms in superlattice Si wafers during thermal annealing were simulated using a comprehensive diffusion model. It was found that the model well predicts boron atoms segregate to {311} defects during thermal annealing and normal TED as well.
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页码：23 / 26
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