Physical modeling of transient enhanced diffusion in silicon

被引：0

作者：

Taniguchi, Kenji ^{[1
]}

Saito, Tomoya ^{[1
]}

Xia, Jianxin ^{[1
]}

Kim, Ryangsu ^{[1
]}

Aoki, Takenori ^{[1
]}

Kobayashi, Hiroyuki ^{[1
]}

Kamakura, Yoshinari ^{[1
]}

机构：

[1] Osaka Univ, Osaka, Japan

来源：

International Symposium on VLSI Technology, Systems, and Applications, Proceedings | 1999年

关键词：

Annealing - Approximation theory - Atoms - Computer simulation - Crystal defects - Mathematical models - Semiconducting boron - Semiconductor superlattices - Thermal diffusion in solids;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Transient enhanced diffusion (TED) of boron atoms in superlattice Si wafers during thermal annealing were simulated using a comprehensive diffusion model. It was found that the model well predicts boron atoms segregate to {311} defects during thermal annealing and normal TED as well.

引用

页码：23 / 26

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