Ion-induced release of H and D implanted in Be, C, Si and SiC

被引：0
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作者：
Nagata, S. [1 ]
Yamaguchi, S. [1 ]
Bergsaker, H. [1 ]
Emmoth, B. [1 ]
机构：
[1] Tohoku Univ, Japan
来源：
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms | 1988年 / B33卷 / 1-4期
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摘要：
18
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页码：739 / 743
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