Ion-induced release of H and D implanted in Be, C, Si and SiC

被引：0
|
作者：
Nagata, S. [1 ]
Yamaguchi, S. [1 ]
Bergsaker, H. [1 ]
Emmoth, B. [1 ]
机构：
[1] Tohoku Univ, Japan
来源：
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms | 1988年 / B33卷 / 1-4期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
18
引用
收藏
页码：739 / 743
相关论文
共 50 条
  • [21] Effect of implanted species on thermal evolution of ion-induced defects in ZnO
    1600, American Institute of Physics Inc. (115):
  • [22] Effect of implanted species on thermal evolution of ion-induced defects in ZnO
    Azarov, A. Yu
    Hallen, A.
    Du, X. L.
    Rauwel, P.
    Kuznetsov, A. Yu.
    Svensson, B. G.
    JOURNAL OF APPLIED PHYSICS, 2014, 115 (07)
  • [23] CHARACTERIZATION OF ION-IMPLANTED LAYER USING ION-INDUCED ACOUSTIC-SIGNAL
    OGISO, H
    NAKANO, S
    NAGATA, Y
    YAMANAKA, K
    KODA, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1990, 29 : 13 - 15
  • [24] DATA COMPILATION FOR DEPTH DISTRIBUTION OF ION-INDUCED DAMAGE AND ION-IMPLANTED ATOMS
    TERASAWA, M
    NAKAHIGASHI, S
    OZAWA, K
    JOURNAL OF NUCLEAR MATERIALS, 1984, 128 (DEC) : 1001 - 1005
  • [25] PHOTOLUMINESCENCE OF H-IMPLANTED AND D-IMPLANTED 4H SIC
    CHOYKE, WJ
    PATRICK, L
    PHYSICAL REVIEW B, 1974, 9 (08): : 3214 - 3219
  • [26] Recrystallization of MeV Si implanted 6H-SiC
    Harada, S
    Ishimaru, M
    Motooka, T
    Nakata, T
    Yoneda, T
    Inoue, M
    APPLIED PHYSICS LETTERS, 1996, 69 (23) : 3534 - 3536
  • [27] Binary collision approximation modeling of ion-induced damage effects in crystalline 6H-SiC
    Lulli, G
    Albertazzi, E
    Bianconi, M
    Nipoti, R
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1999, 148 (1-4): : 573 - 577
  • [28] Ion-Induced Mesoplasma Formation and Thermal Destruction in 4H-SiC Power MOSFET Devices
    McPherson, Joseph A.
    Hitchcock, Collin W.
    Paul Chow, T.
    Ji, Wei
    Woodworth, Andrew A.
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2021, 68 (05) : 651 - 658
  • [29] Sequential phase formation by ion-induced epitaxy in Fe-implanted Si(001). Study of their properties and thermal behavior
    Behar, M
    Bernas, H
    Desimoni, J
    Lin, XW
    Maltez, RL
    JOURNAL OF APPLIED PHYSICS, 1996, 79 (02) : 752 - 762
  • [30] Ion-induced interface layer formation in W/Si and WRe/Si multilayers
    Kessels, MJH
    Verhoeven, J
    Tichelaar, FD
    Bijkerk, F
    SURFACE SCIENCE, 2005, 582 (1-3) : 227 - 234
12345