Measuring p-n junction minority carrier diffusion length by microwave photoconductivity spectrum instrument

被引：0
|
作者：
Chu, Youling [1 ]
Wang, Zongxin [1 ]
Wu, Tianfu [1 ]
机构：
[1] Fudan Univ, Shanghai, China
来源：
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 1993年 / 14卷 / 12期
关键词：
Photoelectron spectroscopy;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：754 / 759
相关论文
共 50 条
  • [41] Measuring minority-carrier diffusion length using a Kelvin probe force microscope
    Shikler, R
    Fried, N
    Meoded, T
    Rosenwaks, Y
    PHYSICAL REVIEW B, 2000, 61 (16): : 11041 - 11046
  • [42] Microwave Photodetection in an Ultraclean Suspended Bilayer Graphene p-n Junction
    Jung, Minkyung
    Rickhaus, Peter
    Zihlmann, Simon
    Makk, Peter
    Schonenberger, Christian
    NANO LETTERS, 2016, 16 (11) : 6988 - 6993
  • [43] GENERATION OF HARMONICS AND SUBHARMONICS AT MICROWAVE FREQUENCIES WITH P-N JUNCTION DIODES
    LEENOV, D
    UHLIR, A
    PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1959, 47 (10): : 1724 - 1729
  • [44] MEASURING MOBILITY AND DENSITY OF CHARGE CARRIERS NEAR A P-N JUNCTION
    POMERANTZ, D
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (2P1) : 196 - +
  • [45] Eddy currents appearing in a p-n junction in a high microwave field
    Shamirzaev, S. H.
    Gulyamov, G.
    Dadamirzaev, M. G.
    Gulyamov, A. G.
    SEMICONDUCTORS, 2011, 45 (08) : 1035 - 1037
  • [46] Eddy currents appearing in a p-n junction in a high microwave field
    S. H. Shamirzaev
    G. Gulyamov
    M. G. Dadamirzaev
    A. G. Gulyamov
    Semiconductors, 2011, 45 : 1035 - 1037
  • [47] Appearance of negative resistance in p-n junction structures in a microwave field
    Usanov, DA
    Skripal, AV
    Ugryumova, NV
    SEMICONDUCTORS, 1998, 32 (11) : 1248 - 1250
  • [48] Appearance of negative resistance in p-n junction structures in a microwave field
    D. A. Usanov
    A. V. Skripal’
    N. V. Ugryumova
    Semiconductors, 1998, 32 : 1248 - 1250
  • [49] MINORITY-CARRIER LIFETIME MEASUREMENTS OF EFFICIENT GAALAS P-N HETEROJUNCTIONS
    NISHIZAWA, J
    SUTO, K
    TESHIMA, T
    JOURNAL OF APPLIED PHYSICS, 1977, 48 (08) : 3484 - 3495
  • [50] 3D determination of the minority carrier lifetime and the p-n junction recombination velocity of a polycrystalline silicon solar cell
    Sam, R.
    Zouma, B.
    Zougmore, F.
    Koalaga, Z.
    Zoungrana, M.
    Zerbo, I.
    1ST INTERNATIONAL SYMPOSIUM ON ELECTRICAL ARC AND THERMAL PLASMAS IN AFRICA (ISAPA), 2012, 29
12345