Effect of high-temperature electron irradiation on the formation of radiative defects in silicon

被引：0
|
作者：
Buyanova, I.A. [1 ]
Hallberg, T. [2 ]
Murin, L.I. [3 ]
Markevich, V.P. [3 ]
Monemar, B. [1 ]
Lindström, J.L. [4 ]
机构：
[1] Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, Sweden
[2] Swedish Defence Research Establishment, Box 1165, S-581 11 Linköping, Sweden
[3] Institute of Solid State and Semiconductor Physics, Minsk 220072, Belarus
[4] Solid State Physics, University of Lund, Box118, S-221 00 Lund, Sweden
来源：
Physica B: Condensed Matter | 1999年 / 273卷
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：528 / 531
相关论文
共 50 条
  • [31] Effect of electron irradiation on the formation and healing of defects in carbon nanotubes
    Anikeyev V.V.
    Kovalchuk B.V.
    Lazorenko V.M.
    Mikhaylova G.Y.
    Nishchenko M.M.
    Pimenov V.N.
    Prikhodko G.P.
    Sadykhov S.I.O.
    Tovtin V.I.
    Inorganic Materials: Applied Research, 2016, 7 (2) : 204 - 209
  • [32] Formation of carbon nanostructures in nuclear graphite under high-temperature in situ electron-irradiation
    Johns, Steve
    Poulsen, Tyler
    Kane, Joshua J.
    Windes, William E.
    Ubic, Rick
    Karthik, Chinnathambi
    CARBON, 2019, 143 : 908 - 914
  • [33] The Use of Different Pulsed Electron Irradiation for the Formation of Radiation Defects in Silicon Crystals
    Yeritsyan, H. N.
    Sahakyan, A. A.
    Grigoryan, N. E.
    Harutyunyan, V. V.
    Grigoryan, B. A.
    Amatuni, G. A.
    Petrosyan, V. H.
    Khachatryan, A. A.
    Rhodes, C. J.
    JOURNAL OF ELECTRONIC MATERIALS, 2018, 47 (07) : 4010 - 4015
  • [34] INFLUENCE OF THE PARAMETERS OF PULSED ELECTRON-IRRADIATION ON THE EFFICIENCY OF FORMATION OF DEFECTS IN SILICON
    ABDUSATTAROV, AG
    EMTSEV, VV
    MASHOVETS, TV
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1989, 23 (12): : 1375 - 1376
  • [35] OBSERVATION OF THE FORMATION OF ELECTRON-IRRADIATION INDUCED SECONDARY DEFECTS IN CZOCHRALSKI SILICON
    HUA, GC
    OSHIMA, R
    FUJITA, FE
    JOURNAL OF MATERIALS SCIENCE, 1990, 25 (1A) : 328 - 336
  • [36] The Use of Different Pulsed Electron Irradiation for the Formation of Radiation Defects in Silicon Crystals
    H. N. Yeritsyan
    A. A. Sahakyan
    N. E. Grigoryan
    V. V. Harutyunyan
    B. A. Grigoryan
    G. A. Amatuni
    V. H. Petrosyan
    A. A. Khachatryan
    C. J. Rhodes
    Journal of Electronic Materials, 2018, 47 : 4010 - 4015
  • [37] Formation of silicon carbide nanocrystals by high-temperature carbonization of porous silicon
    Yu. S. Nagornov
    B. M. Kostishko
    S. N. Mikov
    Sh. R. Atazhanov
    A. V. Zolotov
    E. S. Pchelintseva
    Technical Physics, 2007, 52 : 1093 - 1097
  • [38] Formation of silicon carbide nanocrystals by high-temperature carbonization of porous silicon
    Nagornov, Yu. S.
    Kostishko, B. M.
    Mikov, S. N.
    Atazhanov, Sh. R.
    Zolotov, A. V.
    Pchelintseva, E. S.
    TECHNICAL PHYSICS, 2007, 52 (08) : 1093 - 1097
  • [39] Formation, evolution, and prevention of thermally induced defects on germanium and silicon upon high-temperature vacuum annealing
    Kim, Taeyeong
    Jeong, Mun Goung
    Lee, Bong Jae
    Lee, Jungchul
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2021, 39 (06):
  • [40] Low temperature anneal of electron irradiation induced defects in p type silicon
    Trauwaert, MA
    Vanhellemont, J
    Maes, HE
    Van Bavel, AM
    Langouche, G
    Clauws, P
    MATERIALS SCIENCE AND TECHNOLOGY, 1998, 14 (12) : 1295 - 1298
12345