Effect of high-temperature electron irradiation on the formation of radiative defects in silicon

被引：0
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作者：
Buyanova, I.A. [1 ]
Hallberg, T. [2 ]
Murin, L.I. [3 ]
Markevich, V.P. [3 ]
Monemar, B. [1 ]
Lindström, J.L. [4 ]
机构：
[1] Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, Sweden
[2] Swedish Defence Research Establishment, Box 1165, S-581 11 Linköping, Sweden
[3] Institute of Solid State and Semiconductor Physics, Minsk 220072, Belarus
[4] Solid State Physics, University of Lund, Box118, S-221 00 Lund, Sweden
来源：
Physica B: Condensed Matter | 1999年 / 273卷
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页码：528 / 531
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