Raman and Rutherford backscattering analyses of cubic SiC thin films grown on Si by vertical chemical vapor deposition

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Natl Univ of Singapore, Singapore, Singapore [1 ]
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Thin Solid Films | / 1卷 / 1-7期
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We acknowledge Profs. S. Perkowitz; K.T. Yue and A. Rohatgi for their support and help in this work. This work was partially supportedb y the NASA contract no. NAGW-1192 through the Center for Commercial Development of Space Power and Advanced Electronics at Auburn University;
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