Trion dephasing by electron scattering in GaAs/AlAs quantum wells

被引:0
|
作者
Technion - Israel Inst of Technology, Haifa, Israel [1 ]
机构
来源
J Opt Soc Am B | / 7卷 / 1372-1375期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
17
引用
收藏
相关论文
共 50 条
  • [31] Characteristics of photoluminescence due to exciton-exciton scattering in GaAs/AlAs multiple quantum wells
    Nakayama, M.
    Hirao, T.
    Hasegawa, T.
    JOURNAL OF APPLIED PHYSICS, 2009, 105 (12)
  • [32] Influence of electron localization on the spin dephasing anisotropy in bias GaAs/AlGaAs coupled quantum wells
    A. V. Sekretenko
    A. V. Larionov
    JETP Letters, 2012, 94 : 853 - 857
  • [33] Effects of an electron gas on the negative trion in semiconductor quantum wells
    Dacal, LCO
    Brum, JA
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2002, 12 (1-4): : 546 - 549
  • [34] Influence of Electron Localization on the Spin Dephasing Anisotropy in Bias GaAs/AlGaAs Coupled Quantum Wells
    Sekretenko, A. V.
    Larionov, A. V.
    JETP LETTERS, 2012, 94 (12) : 853 - 857
  • [35] Electron-phonon scattering rates in semiconductor quantum wells with thin AlAs layers
    McIntyre, CR
    Reinecke, TL
    PHYSICAL REVIEW B, 1997, 56 (20): : 13428 - 13433
  • [36] Electron transport and optical properties of shallow GaAs/InGaAs/GaAs quantum wells with a thin central AlAs barrier
    Kulbachinskii, V. A.
    Vasil'evskii, I. S.
    Lunin, R. A.
    Galistu, G.
    de Visser, A.
    Galiev, G. B.
    Shirokov, S. S.
    Mokerov, V. G.
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2007, 22 (03) : 222 - 228
  • [37] INTERFACE ROUGHNESS SCATTERING AND ELECTRON MOBILITIES IN THIN GAAS QUANTUM WELLS
    GOTTINGER, R
    GOLD, A
    ABSTREITER, G
    WEIMANN, G
    SCHLAPP, W
    EUROPHYSICS LETTERS, 1988, 6 (02): : 183 - 188
  • [38] Hot-electron relaxation via the emission of GaAs optical modes and AlAs interface modes in GaAs/AlAs multi-quantum wells
    Ozturk, E.
    Balkan, N.
    Straw, A.
    Constantinou, N.C.
    Ridley, B.K.
    Ritchie, D.A.
    Linfield, E.H.
    Chrchchill, C.
    Jones, G.A.C.
    Semiconductor Science and Technology, 1994, 9 (5 SUPPL) : 782 - 785
  • [39] Non-Markovian dephasing of excitons in GaAs quantum wells
    Iwamatsu, A
    Ogawa, Y
    Mitsumori, Y
    Minami, F
    JOURNAL OF LUMINESCENCE, 2006, 119 : 487 - 491
  • [40] Dephasing of bloch oscillations due to interface roughness scattering in GaAs/AlAs superlattices
    Unuma, Takeya
    Sekine, Norihiko
    Hirakawa, Kazithiko
    PHYSICS OF SEMICONDUCTORS, PTS A AND B, 2007, 893 : 495 - +