Hot-electron relaxation via the emission of GaAs optical modes and AlAs interface modes in GaAs/AlAs multi-quantum wells

被引：0
|
作者：
Ozturk, E. [1 ]
Balkan, N. [1 ]
Straw, A. [1 ]
Constantinou, N.C. [1 ]
Ridley, B.K. [1 ]
Ritchie, D.A. [1 ]
Linfield, E.H. [1 ]
Chrchchill, C. [1 ]
Jones, G.A.C. [1 ]
机构：
[1] Univ of Essex, Colchester, United Kingdom
来源：
Semiconductor Science and Technology | 1994年 / 9卷 / 5 SUPPL期
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页码：782 / 785
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