High-frequency GaInP/GaAs heterojunction bipolar transistor with reduced base-collector capacitance using a selective buried sub-collector

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Columbia Univ, New York, United States [1 ]
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IEEE Electron Device Lett | / 11卷 / 531-533期
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Number:; DAAH04-94-G-00.57; Acronym:; -; Sponsor:; ECS-93.19987; NSF; Sponsor: National Science Foundation;
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