BASE-COLLECTOR JUNCTION CAPACITANCE OF BIPOLAR TRANSISTORS OPERATING AT HIGH CURRENT DENSITIES.

被引：0

作者：

Liou, Juin J. ^{[1
]}

机构：

[1] Univ of Central Florida, Orlando,, FL, USA, Univ of Central Florida, Orlando, FL, USA

来源：

IEEE Transactions on Electron Devices | 1987年 / ED-34卷 / 11期

关键词：

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

共 50 条

[1] BASE-COLLECTOR JUNCTION CAPACITANCE OF BIPOLAR-TRANSISTORS OPERATING AT HIGH-CURRENT DENSITIES
LIOU, JJ
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (11) : 2304 - 2308
[2] ON BEHAVIOUR OF BASE-COLLECTOR JUNCTION OF A TRANSISTOR AT HIGH COLLECTOR CURRENT DENSITIES
PALS, JA
DEGRAAFF, HC
PHILIPS RESEARCH REPORTS, 1969, 24 (01): : 53 - +
[3] Base-collector heterojunction barrier effects at high current densities of Si/SiGe/Si heterojunction bipolar transistors
Song, JL
Yuan, JS
PROCEEDINGS IEEE SOUTHEASTCON '98: ENGINEERING FOR A NEW ERA, 1998, : 162 - 165
[4] COLLECTOR BASE JUNCTION CAPACITANCE OF ADVANCED BIPOLAR-TRANSISTORS OPERATING AT AVALANCHE BREAKDOWN
YUAN, JS
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1992, 134 (02): : 575 - 581
[5] Modeling the bias dependence of the base-collector capacitance of power heterojunction bipolar transistors
Samelis, A
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1999, 47 (05) : 642 - 645
[6] A Multiregion Approach to Modeling the Base-Collector Junction Capacitance
Nardmann, Tobias
Schroter, Michael
Sakalas, Paulius
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2016, 63 (09) : 3808 - 3811
[7] Simple and accurate method to extract intrinsic and extrinsic base-collector capacitance of bipolar transistors
Blayac, S
Kahn, M
Riet, M
Berdaguer, P
Godin, J
ELECTRONICS LETTERS, 2003, 39 (17) : 1282 - 1283
[8] CURRENT DEPENDENCE OF BASE COLLECTOR CAPACITANCE OF BIPOLAR-TRANSISTORS
LIU, W
HARRIS, JS
SOLID-STATE ELECTRONICS, 1992, 35 (08) : 1051 - 1057
[9] MODELING THE TWO-DIMENSIONAL EMITTER-BASE AND BASE-COLLECTOR JUNCTION CAPACITANCES OF BIPOLAR JUNCTION TRANSISTORS
LIOU, JJ
WHITTAKER, A
YUAN, JS
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1989, 113 (02): : K267 - K271
[10] Base-collector heterojunction effect in SiGe-Base bipolar transistors
Ugajin, Mamoru
Amemiya, Yoshihito
Solid-State Electronics, 1991, 34 (06): : 593 - 598

← 1 2 3 4 5 →