BASE-COLLECTOR JUNCTION CAPACITANCE OF BIPOLAR TRANSISTORS OPERATING AT HIGH CURRENT DENSITIES.

被引：0

作者：

Liou, Juin J. ^{[1
]}

机构：

[1] Univ of Central Florida, Orlando,, FL, USA, Univ of Central Florida, Orlando, FL, USA

来源：

IEEE Transactions on Electron Devices | 1987年 / ED-34卷 / 11期

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引用

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