Diamond grain growth on Cu substrate

被引：0
|
作者：
Ojika, Shin-ichi [1 ]
Yamashita, Satoshi [1 ]
Kataoka, Kazuhiro [1 ]
Ishikura, Takefumi [1 ]
机构：
[1] Tokyo Reinetsu Sangyo Co, Ltd, Yokohama, Japan
来源：
Japanese Journal of Applied Physics, Part 2: Letters | 1993年 / 32卷 / 11 B期
关键词：
Chemical vapor deposition - Chemical variables control - Copper - Crystal growth - Cyclotron resonance - Electron resonance - Grain growth - Grain size and shape - Interfacial energy - Morphology - Plasma applications - Substrates;
D O I：
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中图分类号：
学科分类号：
摘要：
Diamond growth on Cu substrates with vapor phase deposition has been studied. Diamond was deposited on Cu substrates using an electron cyclotron resonance chemical vapor deposition apparatus. Its growth process was observed through morphological variation with time in the same field of vision, which showed that diamond grains on Cu substrates grew not only through increase of the size of grains but also through their combination, and that isolated grains at an early stage of growth migrated on the substrate as if they were attracted by each other. This manner of diamond growth is specific to cases where Cu is used as the substrate.
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