MOCVD growth of ordered Cd(1-x)ZnxTe epilayers

被引：0
|
作者：
Cohen, K. [1 ]
Stolyarova, S. [1 ]
Amir, N. [1 ]
Chack, A. [2 ]
Beserman, R. [2 ]
Weil, R. [2 ]
Nemirovsky, Y. [1 ]
机构：
[1] Department of Electrical Engineering, Kidron Microlectron. Research Center, Technion, 32000 Haifa, Israel
[2] Department of Physics, Solid State Institute, Technion, Haifa 32000, Israel
来源：
Journal of Crystal Growth | 1999年 / 198-199卷 / pt 2期
关键词：
Number:; -; Acronym:; Sponsor: Ministry of Aliyah and Immigrant Absorption; ISF; Sponsor: Israel Science Foundation;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：1174 / 1178
相关论文
共 50 条
  • [31] CRYSTAL-STRUCTURE OF (SIC)(X)(ALN)(1-X) GROWN ON 6H-SIC BY MOCVD
    WONGCHOTIGUL, K
    SPENCER, MG
    CHEN, N
    PRASAD, BD
    MATERIALS LETTERS, 1994, 21 (5-6) : 381 - 385
  • [32] First-principles analysis of Cx(BN)1-x ordered alloy
    Zaoui, A
    Hassan, FE
    SUPERLATTICES AND MICROSTRUCTURES, 2002, 32 (2-3) : 91 - 97
  • [33] MOCVD growth of AlGaN epilayers and AlGaN/GaN SLS in a wide composition range
    Lundin, WV
    Sakharov, AV
    Tsatsul'Nikov, AF
    Zavarin, EE
    Besulkin, AI
    Fomin, AV
    Sizov, DS
    UV SOLID-STATE LIGHT EMITTERS AND DETECTORS, 2004, 144 : 223 - 231
  • [34] Engineering of InN epilayers by repeated deposition of ultrathin layers in pulsed MOCVD growth
    Mickevicius, J.
    Dobrovolskas, D.
    Steponavicius, T.
    Malinauskas, T.
    Kolenda, M.
    Kadys, A.
    Tamulaitis, G.
    APPLIED SURFACE SCIENCE, 2018, 427 : 1027 - 1032
  • [35] Effect of growth conditions at MOCVD on thickness uniformity of GaInAsP epilayers obtained on InP
    Marichev, A. E.
    Levin, R. V.
    Pushnyii, B. V.
    Gagis, G. S.
    Vasil'ev, V. I.
    Scheglov, M. P.
    Kazantsev, D. Yu
    Ber, B. Ya
    Popova, T. B.
    Marukhina, E. P.
    INTERNATIONAL CONFERENCE PHYSICA.SPB/2018, 2018, 1135
  • [36] GROWTH OF HIGH-PURITY GAAS EPILAYERS BY MOCVD AND THEIR APPLICATIONS TO MICROWAVE MESFETS
    NAKANISI, T
    UDAGAWA, T
    TANAKA, A
    KAMEI, K
    JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) : 255 - 262
  • [37] Growth design for high quality AlxGa(1-x)N layer with high AlN-fraction on Si (111) substrate by MOCVD
    Bardhan, Abheek
    Raghavan, Srinivasan
    JOURNAL OF CRYSTAL GROWTH, 2022, 578
  • [38] Growth and photosensitivity of the (GaAs)1-x(ZnSe)x solid solutions
    Physicotechnical Institute, NPO Fizika-Solntse, Academy of Sciences of the Republic of Uzbekistan
    Appl Sol Energy, 2006, 1 (52-55):
  • [39] Carrier-induced ferromagnetic interactions in p-doped Zn(1-x)MnxTe epilayers
    Ferrand, D
    Cibert, J
    Bourgognon, C
    Tatarenko, S
    Wasiela, A
    Fishman, G
    Bonanni, A
    Sitter, H
    Kolesnik, S
    Jaroszyski, J
    Barcz, A
    Dietl, T
    JOURNAL OF CRYSTAL GROWTH, 2000, 214 : 387 - 390
  • [40] Carrier induced ferromagnetic interactions and transport properties of p-Zn(1-x)MnxTe epilayers
    Ferrand, D
    Cibert, J
    Wasiela, A
    Bourgognon, C
    Tatarenko, S
    Fishman, G
    Kolesnik, S
    Jaroszynski, J
    Dietl, T
    Barbara, B
    Dufeu, D
    JOURNAL OF APPLIED PHYSICS, 2000, 87 (09) : 6451 - 6453
12345