MOCVD growth of ordered Cd(1-x)ZnxTe epilayers

被引:0
|
作者
Cohen, K. [1 ]
Stolyarova, S. [1 ]
Amir, N. [1 ]
Chack, A. [2 ]
Beserman, R. [2 ]
Weil, R. [2 ]
Nemirovsky, Y. [1 ]
机构
[1] Department of Electrical Engineering, Kidron Microlectron. Research Center, Technion, 32000 Haifa, Israel
[2] Department of Physics, Solid State Institute, Technion, Haifa 32000, Israel
来源
Journal of Crystal Growth | 1999年 / 198-199卷 / pt 2期
关键词
Number:; -; Acronym:; Sponsor: Ministry of Aliyah and Immigrant Absorption; ISF; Sponsor: Israel Science Foundation;
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
页码:1174 / 1178
相关论文
共 50 条
  • [21] GROWTH AND PROPERTIES OF GASB, GA1-XINXSB AND GA1-XALXSB EPILAYERS BY MOCVD
    JUANG, FS
    SU, YK
    PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS, 1990, 20 (04): : 285 - 312
  • [22] Growth of H1-x(Cd1-yZny)xTe epilayers on (100) Cd1-yZnyTe/GaAs substrates by ISOVPE
    Koo, BH
    Ishikawa, Y
    Wang, JF
    Isshiki, M
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1999, 66 (1-3): : 70 - 74
  • [23] Growth of the product Πnj=1(1-xαj)
    Bell, JP
    Borwein, PB
    Richmond, LB
    ACTA ARITHMETICA, 1998, 86 (02) : 155 - 170
  • [24] Growth Kinetic Studies for MOCVD CdTe and HgCdTe Epilayers on GaAs Substrates
    徐飞
    彭瑞伍
    丁永庆
    RareMetals, 1992, (01) : 13 - 19
  • [25] GROWTH OF ZN(1-X)MN(X)SE AND ZN(1-X)FE(X)SE MIXED-CRYSTALS
    DEMIANIUK, M
    MATERIALS RESEARCH BULLETIN, 1990, 25 (03) : 337 - 342
  • [26] MOCVD growth and optical characterization of CdS and ZnCdS epilayers on GaAs substrate
    Zhang, JY
    Zhang, ZZ
    Shan, CX
    Shen, DZ
    Liu, YC
    Lu, YM
    Fan, XW
    MATERIALS, DEVICES, AND SYSTEMS FOR DISPLAY AND LIGHTING, 2002, 4918 : 211 - 215
  • [27] Optical and magnetic properties of Cd(1-x)FexTiO3 (x=1%)
    Bahloul, R.
    Karoum, L.
    Hamzah, M.
    Khenfouch, M.
    Srinivasu, V. V.
    Sayouri, S.
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2018, 29 (23) : 19854 - 19860
  • [28] PHOTOVOLTA EFFECT IN TERNARY SYSTEM ZN(X) CD(1-X)TE
    HOLLAN, L
    LEBRUN, J
    PATAQUIS, C
    SCHILLER, C
    SOLID STATE COMMUNICATIONS, 1969, 7 (01) : 203 - &
  • [29] MOCVD Growth of GaAs / AlxGa1-x As Superlattices
    徐现刚
    黄柏标
    任红文
    刘士文
    蒋民华
    RARE METALS, 1994, (01) : 13 - 18
  • [30] Hot wall epitaxial growth of highly ordered organic epilayers
    Sitter, H
    Andreev, A
    Matt, G
    Sariciftci, NS
    SYNTHETIC METALS, 2003, 138 (1-2) : 9 - 13