Low frequency noise in GaN/AlGaN heterostructure field effect transistors in non-ohmic region

Low frequency noise in GaN/AlGaN heterostructures field effect transistors was examined in non-ohmic region. Experiments showed that spectral noise density of the drain current fluctuations close to the saturation voltage increases faster than the square of the drain voltage. It was found that at drain voltages higher than saturation voltage, drain current fluctuation decreases with a further increase in drain voltage.