Low frequency noise in GaN/AlGaN heterostructure field effect transistors in non-ohmic region

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[1] [1,Rumyantsev, S.L.
[2] 1,Pala, N.
[3] Shur, M.S.
[4] Levinshtein, M.E.
[5] Asif Khan, M.
[6] Simin, G.
[7] Yang, J.
来源：
Rumyantsev, S.L. (palan@rpi.edu) | 1600年 / American Institute of Physics Inc.卷 / 93期
关键词：
Electric currents - Electric potential - Field effect transistors - Gallium nitride - Semiconducting aluminum compounds - Spurious signal noise;
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摘要：
Low frequency noise in GaN/AlGaN heterostructures field effect transistors was examined in non-ohmic region. Experiments showed that spectral noise density of the drain current fluctuations close to the saturation voltage increases faster than the square of the drain voltage. It was found that at drain voltages higher than saturation voltage, drain current fluctuation decreases with a further increase in drain voltage.
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