LOW DARK CURRENT InGaAs/InP p-i-n PHOTODIODE WITH COVERED MESA STRUCTURE.

被引：0
|
作者：
Ohnaka, Kiyoshi [1 ]
Kubo, Minoru [1 ]
Shibata, Jun [1 ]
机构：
[1] Matsushita Electric Industrial Co, Moriguchi, Jpn, Matsushita Electric Industrial Co, Moriguchi, Jpn
来源：
IEEE Transactions on Electron Devices | 1987年 / ED-34卷 / 02期
关键词：
SEMICONDUCTING INDIUM COMPOUNDS;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
An InGaAs p-i-n photodiode with a covered mesa structure, having extremely low dark current characteristics and high yields was developed. The device consists of only two epitaxial layers: n** minus -InP and n** minus -InGaAs, continuously grown on an n** plus -InP substrate by liquid-phase epitaxy. The surface p-n junction of the photodiode appears in the n** minus -InP layer, which has a bandgap about two times wider than the InGaAs. The resulting structure provides an extremely low dark current of 20 pA at a reverse bias voltage of 10 V and a high yield of 80%.
引用
收藏
页码：199 / 204
相关论文
共 50 条
  • [31] METALORGANIC CHEMICAL VAPOR-DEPOSITION INGAAS P-I-N PHOTODIODES WITH EXTREMELY LOW DARK CURRENT
    GALLANT, M
    PUETZ, N
    ZEMEL, A
    SHEPHERD, FR
    APPLIED PHYSICS LETTERS, 1988, 52 (09) : 733 - 735
  • [32] VERY LOW DARK CURRENT AND HIGH QUANTUM EFFICIENT InGaAs/InP P-I-N PHOTODIODES GROWN BY CHEMICAL-BEAM EPITAXY.
    Tsang, W.T.
    Campbell, J.C.
    1862, (ED-33):
  • [33] High-Current Backside-Illuminated InGaAs/InP p-i-n Potodiode
    Itakura, Shigetaka
    Sakai, Kiyohide
    Nagatsuka, Tsutomu
    Akiyama, Tomohiro
    Hirano, Yoshihito
    Ishimura, Eitaro
    Nakaji, Masaharu
    Aoyagi, Toshitaka
    MWP: 2009 INTERNATIONAL TOPICAL MEETING ON MICROWAVE PHOTONICS, 2009, : 23 - +
  • [34] Light-induced negative differential resistance in planar InP/InGaAs/InP double-heterojunction p-i-n photodiode
    Ho, CL
    Wu, MC
    Ho, WJ
    Liaw, JW
    APPLIED PHYSICS LETTERS, 1999, 74 (26) : 4008 - 4010
  • [35] Shallow-Mesa InP Avalanche Photodiode with Ultralow Dark Current
    Zhang, Jingchang
    Han, Yaru
    Xiong, Bing
    Luo, Yi
    Sun, Changzheng
    Wang, Lai
    Wang, Jian
    Han, Yanjun
    Hao, Zhibiao
    Li, Hongtao
    Yu, Jiadong
    2020 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO), 2020,
  • [36] 12-CHANNEL INDIVIDUALLY ADDRESSABLE INGAAS/INP P-I-N PHOTODIODE AND INGAASP/INP LED ARRAYS IN A COMPACT PACKAGE
    OTA, Y
    MILLER, RC
    FORREST, SR
    KAPLAN, DR
    SEABURY, CW
    HUNTINGTON, RB
    JOHNSON, JG
    POTOPOWICZ, JR
    JOURNAL OF LIGHTWAVE TECHNOLOGY, 1987, 5 (08) : 1118 - 1122
  • [37] High sensitivity and low dark current PIN photodiode with homojunction in n-InGaAs/InP isotype heterostructure
    Budianu, E
    Purica, M
    Rusu, E
    Nan, S
    CAS '97 PROCEEDINGS - 1997 INTERNATIONAL SEMICONDUCTOR CONFERENCE, 20TH EDITION, VOLS 1 AND 2, 1997, : 485 - 488
  • [38] Germanium-tin on Silicon p-i-n Photodiode with Low Dark Current due to Sidewall Surface Passivation
    Dong, Yuan
    Wang, Wei
    Lei, Dian
    Gong, Xiao
    Zhou, Qian
    Lee, Shuh Ying
    Loke, Wan Khai
    Yoon, Soon-Fatt
    Liang, Gengchiau
    Yeo, Yee-Chia
    2015 OPTICAL FIBER COMMUNICATIONS CONFERENCE AND EXHIBITION (OFC), 2015,
  • [39] Absorption saturation nonlinearity in InGaAs/InP p-i-n photodiodes
    Juodawlkis, PW
    O'Donnell, FJ
    Hargreaves, JJ
    Oakley, DC
    Napoleone, A
    Groves, SH
    Mahoney, LJ
    Molvar, KM
    Missaggia, LJ
    Donnelly, JP
    Williamson, RC
    Twichell, JC
    2002 IEEE/LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2, 2002, : 426 - 427
  • [40] Simulation of electrical and optical characteristics for InP/InGaAs/InP p-i-n photodiodes
    Wang, Xiaodong
    Hu, Weida
    Chen, Xiaoshuang
    Tang, Hengjing
    Li, Tao
    Gong, Haimei
    Lu, Wei
    35TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ 2010), 2010,
12345