LOW DARK CURRENT InGaAs/InP p-i-n PHOTODIODE WITH COVERED MESA STRUCTURE.

被引：0

作者：

Ohnaka, Kiyoshi ^{[1
]}

Kubo, Minoru ^{[1
]}

Shibata, Jun ^{[1
]}

机构：

[1] Matsushita Electric Industrial Co, Moriguchi, Jpn, Matsushita Electric Industrial Co, Moriguchi, Jpn

来源：

IEEE Transactions on Electron Devices | 1987年 / ED-34卷 / 02期

关键词：

SEMICONDUCTING INDIUM COMPOUNDS;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

An InGaAs p-i-n photodiode with a covered mesa structure, having extremely low dark current characteristics and high yields was developed. The device consists of only two epitaxial layers: n** minus -InP and n** minus -InGaAs, continuously grown on an n** plus -InP substrate by liquid-phase epitaxy. The surface p-n junction of the photodiode appears in the n** minus -InP layer, which has a bandgap about two times wider than the InGaAs. The resulting structure provides an extremely low dark current of 20 pA at a reverse bias voltage of 10 V and a high yield of 80%.

引用

页码：199 / 204

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