Misfit dislocations in low-temperature grown Ge/Si heterostructures

被引：0
|
作者：
机构：
来源：
| 1600年 / 71期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [41] Configuration and interaction of misfit dislocations in si1-xgex/si(001) epilayer heterostructures grown by gas-source mbe
    Won Jae Lee
    Anne E Staton-Bevan
    Metals and Materials, 1999, 5 : 231 - 235
  • [42] Configuration and interaction of misfit dislocations in Si1-xGex/Si(001) epilayer heterostructures grown by gas- source MBE
    Lee, WJ
    Staton-Bevan, AE
    METALS AND MATERIALS-KOREA, 1999, 5 (03): : 231 - 235
  • [43] The strain model of misfit dislocations at Ge/Si hetero-interface
    Zhao, Chunwang
    Dong, Zhaoshi
    Shen, Jiajie
    VACUUM, 2022, 196
  • [44] Recombination activity of 'clean' and contaminated misfit dislocations in Si (Ge) structures
    Kittler, M.
    Ulhaq-Bouillet, C.
    Higgs, V.
    Materials science & engineering. B, Solid-state materials for advanced technology, 1994, B24 (1-3): : 52 - 55
  • [45] Relaxed Si0.7Ge0.3 layers grown on low-temperature Si buffers with low threading dislocation density
    Li, JH
    Peng, CS
    Wu, Y
    Dai, DY
    Zhou, JM
    Mai, ZH
    APPLIED PHYSICS LETTERS, 1997, 71 (21) : 3132 - 3134
  • [46] Low-temperature molecular beam epitaxy of Ge on Si
    Leitao, JP
    Fonseca, A
    Sobolev, NA
    Carmo, MC
    Franco, N
    Sequeira, AD
    Burbaev, TM
    Kurbatov, VA
    Rzaev, MM
    Pogosov, AO
    Sibeldin, NN
    Tsvetkov, VA
    Lichtenberger, H
    Schäffler, F
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2005, 8 (1-3) : 35 - 39
  • [47] Strain relaxation of GeSi/SI(001) heterostructures grown by low-temperature molecular-beam epitaxy
    Bolkhovityanov, Yu.B. (bolkhov@isp.nsc.ru), 1600, American Institute of Physics Inc. (96):
  • [48] PHONON SCATTERING AND EFFECT OF DISLOCATIONS ON LOW-TEMPERATURE PHONON CONDUCTIVITY IN GE
    SINGH, M
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1978, 86 (02): : 691 - 696
  • [49] Strain relaxation of GeSi/Si(001) heterostructures grown by low-temperature molecular-beam epitaxy
    Bolkhovityanov, YB
    Deryabin, AS
    Gutakovskii, AK
    Revenko, MA
    Sokolov, LV
    JOURNAL OF APPLIED PHYSICS, 2004, 96 (12) : 7665 - 7674
  • [50] STRAIN-RELIEF MECHANISMS AND NATURE OF MISFIT DISLOCATIONS IN GAAS/SI HETEROSTRUCTURES
    SHARAN, S
    NARAYAN, J
    MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 1989, 113 : 57 - 63
12345