Recombination activity of 'clean' and contaminated misfit dislocations in Si (Ge) structures

被引：0
|
作者：
Kittler, M. [1 ]
Ulhaq-Bouillet, C. [1 ]
Higgs, V. [1 ]
机构：
[1] Inst fur Halbleiterphysik Frankfurt, Frankfurt, Germany
来源：
Materials science & engineering. B, Solid-state materials for advanced technology | 1994年 / B24卷 / 1-3期
关键词：
EBIC - Misfit dislocation - Recombination - Schokley-read-hall recombination theory;
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页码：52 / 55
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