Recombination activity of 'clean' and contaminated misfit dislocations in Si (Ge) structures

被引：0

作者：

Kittler, M. ^{[1
]}

Ulhaq-Bouillet, C. ^{[1
]}

Higgs, V. ^{[1
]}

机构：

[1] Inst fur Halbleiterphysik Frankfurt, Frankfurt, Germany

来源：

Materials science & engineering. B, Solid-state materials for advanced technology | 1994年 / B24卷 / 1-3期

关键词：

EBIC - Misfit dislocation - Recombination - Schokley-read-hall recombination theory;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

页码：52 / 55

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