Dependence of room-temperature oxidation of silicon catalyzed by Cu3Si on the silicide grain size

被引：0
|
作者：
Liu, G.S.
Chen, L.J.
机构：
来源：
Journal of Applied Physics | 1994年 / 75卷 / 05期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [31] Growth kinetics of SiO2 on (001) Si catalyzed by Cu3Si at elevated temperatures
    Huang, H.Y.
    Chen, L.J.
    1600, American Inst of Physics, Woodbury, NY, USA (88):
  • [32] Influence of Hydrogen on Room-Temperature Grain Growth of Electrodeposited Cu Films
    Fukumuro, Naoki
    Yoshida, Hiroki
    Yamazaki, Takaaki
    Fukai, Yuh
    Yae, Shinji
    JOURNAL OF THE JAPAN INSTITUTE OF METALS AND MATERIALS, 2016, 80 (12) : 736 - 739
  • [33] Room-temperature grain growth in sputter-deposited Cu films
    Detavernier, C
    Deduytsche, D
    Van Meirhaeghe, RL
    De Baerdemaeker, J
    Dauwe, C
    APPLIED PHYSICS LETTERS, 2003, 82 (12) : 1863 - 1865
  • [34] Growth kinetics of SiO2 on (001) Si catalyzed by Cu3Si at elevated temperatures
    Huang, HY
    Chen, LJ
    JOURNAL OF APPLIED PHYSICS, 2000, 88 (03) : 1412 - 1417
  • [35] Growth kinetics of SiO2 on (001)Si catalyzed by Cu3Si at elevated temperatures
    Huang, HY
    Chen, LJ
    ADVANCED INTERCONNECTS AND CONTACTS, 1999, 564 : 217 - 222
  • [36] Room-temperature direct benzylic oxidation catalyzed by cobalt(II) perchlorate
    Yang, Yiwen
    Ma, Hongxia
    TETRAHEDRON LETTERS, 2016, 57 (47) : 5278 - 5280
  • [37] OXIDATION OF METHANE TO METHANOL WITH OXYGEN CATALYZED BY EUROPIUM TRICHLORIDE AT ROOM-TEMPERATURE
    YAMANAKA, I
    SOMA, M
    OTSUKA, K
    JOURNAL OF THE CHEMICAL SOCIETY-CHEMICAL COMMUNICATIONS, 1995, (21) : 2235 - 2236
  • [38] SILICON DEPOSITION ON SI(111) SURFACES AT ROOM-TEMPERATURE AND EFFECTS OF ANNEALING
    NAKAHARA, H
    ICHIMIYA, A
    JOURNAL OF CRYSTAL GROWTH, 1990, 99 (1-4) : 514 - 519
  • [39] ROOM-TEMPERATURE FORMATION AND OXIDATION PROPERTIES OF THE CR/SI(111) INTERFACE
    WETZEL, P
    PIRRI, C
    PERUCHETTI, JC
    BOLMONT, D
    GEWINNER, G
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (06): : 3359 - 3365
  • [40] Cu3Si formed by vacuum evaporation deposition enhances hydrogenation of silicon tetrachloride
    Ji, Yuwen
    Xu, Maolan
    Guo, Ruili
    Peng, Wencai
    Zhang, Jianshu
    Zhang, Jinli
    SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2023, 260
12345