Novel phase-modulated excimer-laser crystallization method of silicon thin films

被引：0
|
作者：
Oh, Chang-Ho [1 ]
Ozawa, Motohiro [1 ]
Matsumura, Masakiyo [1 ]
机构：
[1] Tokyo Inst of Technology, Tokyo, Japan
来源：
Japanese Journal of Applied Physics, Part 2: Letters | 1998年 / 37卷 / 5 A期
关键词：
Crystallization - Excimer lasers - Grain growth - Grain size and shape - Light interference - Masks - Phase modulation - Semiconducting silicon - Thin film transistors;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
We propose a novel excimer-laser crystallization method that uses a phase-shift mask for large-grain growth of Si thin films on the glassy substrate. Due to interference effects of the laser light, the phase difference of light at the mask results in spatial modulation of light intensity at the sample surface, which triggers the lateral grain growth. Grains as large as 7 μm could be grown by a single-shot irradiation.
引用
收藏
相关论文
共 50 条
  • [41] Recrystallization mechanism of amorphous silicon thin films upon excimer laser crystallization
    Kuo, Chil-Chyuan
    Yeh, Wen-Chang
    Hsiao, Chih-Ping
    Jeng, Jeng-Ywan
    OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, 2007, 1 (01): : 25 - 30
  • [42] Modeling and experimental analysis in excimer-laser crystallization of a-Si films
    Chen, Yu-Ru
    Chang, Chien-Hung
    Chao, Long-Sun
    JOURNAL OF CRYSTAL GROWTH, 2007, 303 (01) : 199 - 202
  • [43] EXCIMER-LASER REACTIVE ABLATION DEPOSITION OF SILICON-NITRIDE FILMS
    DANNA, E
    LEGGIERI, G
    LUCHES, A
    MARTINO, M
    PERRONE, A
    MAJNI, G
    MENGUCCI, P
    ALEXANDRESCU, R
    MIHAILESCU, IN
    ZEMEK, J
    APPLIED SURFACE SCIENCE, 1995, 86 (1-4) : 170 - 174
  • [44] Heterogeneous nucleation in excimer-laser melted Si thin-films
    Ishihara, R
    Voogt, FC
    POLYCRYSTALLINE SEMICONDUCTORS IV MATERIALS, TECHNOLOGIES AND LARGE AREA ELECTRONICS, 2001, 80-81 : 163 - 168
  • [45] Microscopic beam profile and its relationship with the morphology of poly-Si film grown laterally by a phase-modulated excimer laser crystallization method
    Kimura, Y
    Jyumonji, M
    Hiramatsu, M
    Nishitani, M
    Matsumura, M
    THIN FILM TRANSISTOR TECHNOLOGIES VI, PROCEEDINGS, 2003, 2002 (23): : 82 - 89
  • [46] HIGH-MOBILITY POLY-SI TFTS FABRICATED BY A NOVEL EXCIMER-LASER CRYSTALLIZATION METHOD
    SHIMIZU, K
    SUGIURA, O
    MATSUMURA, M
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1992, 39 (11) : 2664 - 2665
  • [47] Phase-modulated beams technique for thin photorefractive films characterization
    Barmenkov, YO
    Kir'yanov, AV
    Starodumov, AN
    Kozhevnikov, NM
    Lemmetyinen, H
    APPLIED PHYSICS LETTERS, 2000, 76 (14) : 1801 - 1803
  • [48] Origin of preferential grain orientation in excimer laser-induced crystallization of silicon thin films
    Weizman, M.
    Klimm, C.
    Nickel, N. H.
    Rech, B.
    APPLIED PHYSICS LETTERS, 2012, 100 (16)
  • [49] Light absorptive underlayer enhanced excimer-laser crystallization of Si thin-film
    Wenchang Yeh
    Dunyuan Ke
    Chunjun Zhuang
    Hsiangen Huang
    Yubang Yang
    Journal of Materials Research, 2007, 22 : 2973 - 2981
  • [50] Excimer laser crystallization and doping of silicon films on plastic substrates
    Smith, PM
    Carey, PG
    Sigmon, TW
    APPLIED PHYSICS LETTERS, 1997, 70 (03) : 342 - 344
12345