Subthreshold characteristics of laterally gated AlGaAs/InGaAs pseudomorphic high-electron-mobility transistors fabricated with focused ion beam implantation

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Semiconductor Electronics Division, Natl. Inst. Std. Technol., 100 B., Gaithersburg, MD 20899, United States [1 ]
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Mater Lett | / 5卷 / 235-239期
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