Subthreshold characteristics of laterally gated AlGaAs/InGaAs pseudomorphic high-electron-mobility transistors fabricated with focused ion beam implantation

被引：0
|
作者：
Semiconductor Electronics Division, Natl. Inst. Std. Technol., 100 B., Gaithersburg, MD 20899, United States [1 ]
机构：
来源：
Mater Lett | / 5卷 / 235-239期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [21] AlGaN/GaN-Based Laterally Gated High-Electron-Mobility Transistors With Optimized Linearity
    Odabasi, Oguz
    Yilmaz, Doan
    Aras, Erdem
    Asan, Kubra Elif
    Zafar, Salahuddin
    Akoglu, Busra Cankaya
    Butun, Bayram
    Ozbay, Ekmel
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2021, 68 (03) : 1016 - 1023
  • [22] FREE-ELECTRON DISTRIBUTION IN DELTA-DOPED INGAAS/ALGAAS PSEUDOMORPHIC HIGH-ELECTRON-MOBILITY TRANSISTOR STRUCTURES
    JOGAI, B
    YU, PW
    STREIT, DC
    JOURNAL OF APPLIED PHYSICS, 1994, 75 (03) : 1586 - 1591
  • [23] Performance of Surface and Gate-Engineered AlGaAs/InGaAs Pseudomorphic High-Electron Mobility Transistors
    Lin, Yu-Shyan
    Liang, Shih-Kai
    Lin, You-Song
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2009, 156 (06) : H401 - H408
  • [24] CHARACTERIZATION OF ULTRAHIGH-SPEED PSEUDOMORPHIC INGAAS ALGAAS INVERTED HIGH ELECTRON-MOBILITY TRANSISTORS
    FUJISHIRO, HI
    TSUJI, H
    NISHI, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1992, 31 (5A): : 1272 - 1279
  • [25] AlGaAs/InGaAs metal-oxide-semiconductor pseudomorphic high-electron-mobility transistor with a liquid phase oxidized AlGaAs as gate dielectric
    Lee, KW
    Sze, PW
    Wang, YH
    Houng, MP
    SOLID-STATE ELECTRONICS, 2005, 49 (02) : 213 - 217
  • [26] Effect of temperature on novel InAIGaP/GaAs/InGaAs camel-gate pseudomorphic high-electron-mobility transistors
    Lin, YS
    Hsieh, YL
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2006, 153 (05) : G498 - G501
  • [27] Isothermal capacitance transient spectroscopy of pseudomorphic high-electron-mobility transistors
    Maruno, S
    Abe, Y
    Ozeki, T
    Nakamoto, T
    Yoshida, N
    APPLIED PHYSICS LETTERS, 2003, 82 (19) : 3339 - 3341
  • [28] SELF-CONSISTENT K-CENTER-DOT-P BAND-STRUCTURE CALCULATION FOR ALGAAS/INGAAS PSEUDOMORPHIC HIGH-ELECTRON-MOBILITY TRANSISTORS
    JOGAI, B
    JOURNAL OF APPLIED PHYSICS, 1994, 76 (04) : 2316 - 2323
  • [29] PSEUDOMORPHIC N-INGAP/INGAAS/GAAS HIGH-ELECTRON-MOBILITY TRANSISTORS FOR LOW-NOISE AMPLIFIERS
    TAKIKAWA, M
    JOSHIN, K
    IEEE ELECTRON DEVICE LETTERS, 1993, 14 (08) : 406 - 408
  • [30] Extended radio frequency nonlinear model for power prediction of AlGaAs/InGaAs pseudomorphic high electron mobility transistors
    Lin, CK
    Chan, YJ
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 2002, 20 (03): : 1048 - 1051
12345