STUDY OF 2 mu m EPITAXIAL N-WELL CMOS TECHNOLOGY.

被引：0
|
作者：
Ma, Huainan [1 ]
Xu, Jiasheng [1 ]
机构：
[1] Qinghua Univ, China, Qinghua Univ, China
来源：
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 1987年 / 8卷 / 04期
关键词：
CMOS TECHNOLOGY - I-V CHARACTERISTICS;
D O I：
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中图分类号：
学科分类号：
摘要：
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页码：378 / 384
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