Gate-controlled dv/dt- and di/dt-limitation in high power IGBT converters

被引：0
|
作者：
Gerster, Christian [1 ]
Hofer, Patrick [1 ]
机构：
[1] Swiss Federal Inst of Technology, (ETHZ), Zurich, Switzerland
来源：
| 1996年 / EPE Association, Brussels, Belgium卷 / 05期
关键词：
D O I：
10.1080/09398368.1996.11463368
中图分类号：
学科分类号：
摘要：
Power converters
引用
收藏
页码：3 / 4
相关论文
共 50 条
  • [41] An Experimental Assessment of the Impact of High dv/dt SiC Converters on Insulation Lifetime of Electrical Machines
    Hewitt, David
    Sundeep, Shubham
    Wang, Jiabin
    Griffo, Antonio
    Diab, Mohamed
    Yuan, Xibo
    2022 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE), 2022,
  • [42] Harmonic filter with low coupling capacitance for Medium Voltage, high dv/dt PWM converters
    Pawaskar, Vaibhav Uttam
    Nguyen, Van Thuan
    Gohil, Ghanshyamsinh
    Balsara, Poras T.
    2020 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE), 2020, : 3245 - 3252
  • [43] dv/dt Noise canceling circuit in ultra-high-voltage MOS gate drivers
    Zhao, Yong-Rui
    Lai, Xin-Quan
    Du, Han-Xiao
    Liu, Cong
    ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING, 2013, 77 (02) : 271 - 276
  • [44] On-Chip Transformers with Shielding Structures for High dV/dt Immunity Isolated Gate Drive
    Wu, Rongxiang
    Chen, Julong
    Liao, Niteng
    Fang, Xiangming
    2016 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE), 2016,
  • [45] dv/dt Noise canceling circuit in ultra-high-voltage MOS gate drivers
    Yong-Rui Zhao
    Xin-Quan Lai
    Han-Xiao Du
    Cong Liu
    Analog Integrated Circuits and Signal Processing, 2013, 77 : 271 - 276
  • [46] Evaluation of 15 kV SiC N-IGBT and P-IGBT for Complementary Inverter Topology with Zero dv/dt Stress on Gate Drivers
    Kadavelugu, Arun
    Bhattacharya, Subhashish
    Ryu, Sei-Hyung
    Grider, David
    Agarwal, Anant
    Leslie, Scott
    2013 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE), 2013, : 2522 - 2527
  • [47] A di/dt Feedback-Based Active Gate Driver for Smart Switching and Fast Overcurrent Protection of IGBT Modules
    Wang, Zhiqiang
    Shi, Xiaojie
    Tolbert, Leon M.
    Wang, Fei
    Blalock, Benjamin J.
    IEEE TRANSACTIONS ON POWER ELECTRONICS, 2014, 29 (07) : 3720 - 3732
  • [48] DV/DT related spurious gate turn-on of bidirectional switches in a high-frequency cycloconverter
    Burra, RK
    Mazumder, SK
    Huang, RJ
    IEEE TRANSACTIONS ON POWER ELECTRONICS, 2005, 20 (06) : 1237 - 1243
  • [49] 4.5kV Insulated Gate Triggered Thyristor (IGTT) with High di/dt Characteristics for Pulse Power Applications
    Liu, Chao
    Chen, Wanjun
    Shi, Yijun
    Qiao, Bin
    Jiang, Qian
    Xia, Yun
    Zhou, Qijun
    Xu, Xiaorui
    Zhou, Qi
    Li, Zhaoji
    Zhang, Bo
    2019 31ST INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD), 2019, : 347 - 350
  • [50] Determination of dV/dt and dI/dt characteristics for high voltage 4H-SiC Schottky diodes with different types of metal-polymeric packages
    Rybalka, S. B.
    Kulchenkov, E. A.
    Demidov, A. A.
    Zhemoedov, N. A.
    Drakin, A. Yu
    Zotin, V. F.
    Shishkina, O. A.
    II INTERNATIONAL SCIENTIFIC CONFERENCE ON APPLIED PHYSICS, INFORMATION TECHNOLOGIES AND ENGINEERING 25, PTS 1-5, 2020, 1679
12345