Gate-controlled dv/dt- and di/dt-limitation in high power IGBT converters

被引：0
|
作者：
Gerster, Christian [1 ]
Hofer, Patrick [1 ]
机构：
[1] Swiss Federal Inst of Technology, (ETHZ), Zurich, Switzerland
来源：
| 1996年 / EPE Association, Brussels, Belgium卷 / 05期
关键词：
D O I：
10.1080/09398368.1996.11463368
中图分类号：
学科分类号：
摘要：
Power converters
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收藏
页码：3 / 4
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