Characteristics of Mg-doped GaN grown by metallorganic chemical vapor deposition

被引：0

作者：

Eiting, C.J. ^{[1
]}

Grudowski, P.A. ^{[1
]}

Park, J. ^{[1
]}

Lambert, D.J.H. ^{[1
]}

Shelton, B.S. ^{[1
]}

Dupuis, R.D. ^{[1
]}

机构：

[1] Univ of Texas at Austin, Austin, United States

来源：

| / Electrochemical Soc Inc, Pennington, NJ, United States卷 / 144期

关键词：

Annealing - Charge carriers - Composition effects - Electric conductivity of solids - Magnesium - Metallorganic chemical vapor deposition - Photoluminescence - Secondary ion mass spectrometry - Semiconductor doping - Semiconductor growth;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Mg-doped GaN films are grown by metallorganic chemical vapor deposition and characterized by photoluminescence (PL), Hall-effect measurements, and secondary-ion mass spectroscopy (SIMS). Optimum Mg acceptor activation annealing conditions were determined to be 750 °C for 10 min in a nitrogen ambient. The free-hole concentration and electrical conductivity of these layers reach their maximum values at relatively low bis(cyclopentadienyl)magnesium (Cp2Mg) flow rates. The PL peak wavelength and intensity also vary with Cp2Mg flow rate, with the shortest emission wavelength and highest intensity occurring in samples with the highest hole concentration and electrical conductivity. SIMS data on n-p-n epitaxial layers demonstrate abrupt changes in the dopant concentration for Mg.

引用

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