Time-dependent study of low energy electron beam irradiation of Mg-doped GaN grown by metalorganic chemical vapor deposition

We have investigated the low energy electron beam irradiation (LEEBI) annealing kinetics of Mg-doped GaN films grown by metalorganic chemical vapor deposition. Our results show that LEEBI annealing at room temperature, monitored by cathodoluminescence spectroscopy as a function of irradiation time, occurs rapidly initially and then proceeds gradually until saturation. We have also demonstrated that LEEBI annealing is effective even at liquid helium temperature, indicating its athermal mechanism. Our observations support the dynamic model involving electronically stimulated dissociation of Mg-H bonds and the escaping and retrapping of atomic hydrogens. (C) 1996 American Institute of Physics.