Photoelectric properties of GaSb Schottky diodes

被引：0
|
作者：
机构：
来源：
J Appl Phys | / 4卷 / 1813期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [31] Electronic properties of polyindole and polycarbazole Schottky diodes
    Abthagir, PS
    Saraswathi, R
    ORGANIC ELECTRONICS, 2004, 5 (06) : 299 - 308
  • [32] Electrical properties of Schottky diodes based on Carbazole
    Sreejith K. Pisharady
    C. S. Menon
    C. Sudarshanakumar
    Journal of Materials Science, 2006, 41 : 2417 - 2421
  • [33] LONGITUDINAL PHOTOELECTRIC EFFECT IN AU/N-INP SCHOTTKY DIODES WITH AN INTERMEDIATE LAYER
    MEREDOV, MM
    SLOBODCHIKOV, SV
    SMIRNOV, VG
    FILARETOVA, GM
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1983, 17 (11): : 1332 - 1333
  • [34] GRAIN-BOUNDARY EFFECT ON THE ELECTRICAL CHARACTERISTICS OF AU-N-GASB SCHOTTKY DIODES
    BASU, S
    ROY, UN
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1991, 8 (01): : 1 - 3
  • [35] Electric and photoelectric properties of metal porous silicon Schottky structures
    Martin-Palma, RJ
    Guerrero-Lemus, R
    Moreno, JD
    Martinez-Duart, JM
    ECASIA 97: 7TH EUROPEAN CONFERENCE ON APPLICATIONS OF SURFACE AND INTERFACE ANALYSIS, 1997, : 721 - 724
  • [36] ELECTRICAL AND PHOTOELECTRIC PROPERTIES OF CDGEP-2 DIODES
    BORSHCHEVSKII, AS
    LEBEDEV, AA
    MALTSEVA, IA
    OVEZOV, K
    RUD, YV
    UNDALOV, YK
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (10): : 1278 - 1282
  • [37] PHOTOELECTRIC PROPERTIES OF GERMANIUM S-TYPE DIODES
    VILISOV, AA
    VORONKOV, VP
    DIAMANT, VM
    LOPATIN, LG
    PETROV, AS
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (07): : 796 - 798
  • [38] PHOTOELECTRIC PROPERTIES OF NI-CDP2 SCHOTTKY BARRIERS
    BERCHA, DM
    NEBOLA, II
    RADAUTSAN, SI
    SYRBU, NN
    KIOSEV, VK
    TEZLEVAN, VE
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 8 (11): : 1343 - 1347
  • [39] Study of GaSb Schottky contacts
    Su, Yan K.
    Kuan, H.
    Chang, P.H.
    Chiou, S.W.
    Proceedings of SPIE - The International Society for Optical Engineering, 1994, 2364 : 326 - 331
  • [40] ELECTRICAL-PROPERTIES OF PD/N-GASB SCHOTTKY CONTACTS
    SU, YK
    LI, NY
    JUANG, JS
    SOLID-STATE ELECTRONICS, 1991, 34 (04) : 426 - 428
12345