GRAIN-BOUNDARY EFFECT ON THE ELECTRICAL CHARACTERISTICS OF AU-N-GASB SCHOTTKY DIODES

被引：0
|
作者：
BASU, S
ROY, UN
机构：
[1] Materials Science Centre, Indian Institute of Technology, Kharagpur
来源：
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1991年 / 8卷 / 01期
关键词：
D O I：
10.1016/0921-5107(91)90013-L
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Schottky diodes were fabricated by depositing gold on a single grain and on grains incorporating a grain boundary of tellurium-doped GaSb crystals grown by the vertical Bridgman method. The barrier height (phi-Bn), series resistance (R), dark saturation current density (J(s)) and the ideality factor (n) calculated from the I-V and C-V relations and from the relation of Cheung have been compared. Higher J(s) and n values are a result of tunnelling phenomena and heavy doping concentrations of the GaSb samples.
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页码：1 / 3
页数：3
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