GRAIN-BOUNDARY EFFECT ON THE ELECTRICAL CHARACTERISTICS OF AU-N-GASB SCHOTTKY DIODES

被引：0
|
作者：
BASU, S
ROY, UN
机构：
[1] Materials Science Centre, Indian Institute of Technology, Kharagpur
来源：
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1991年 / 8卷 / 01期
关键词：
D O I：
10.1016/0921-5107(91)90013-L
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Schottky diodes were fabricated by depositing gold on a single grain and on grains incorporating a grain boundary of tellurium-doped GaSb crystals grown by the vertical Bridgman method. The barrier height (phi-Bn), series resistance (R), dark saturation current density (J(s)) and the ideality factor (n) calculated from the I-V and C-V relations and from the relation of Cheung have been compared. Higher J(s) and n values are a result of tunnelling phenomena and heavy doping concentrations of the GaSb samples.
引用
收藏
页码：1 / 3
页数：3
相关论文
共 50 条
  • [21] The effect of temperature on the electrical characteristics of Ti/n-GaAs Schottky diodes
    Durmus, Haziret
    Tataroglu, Adem
    Altindal, Semsettin
    Yildirim, Mert
    CURRENT APPLIED PHYSICS, 2022, 44 : 85 - 89
  • [22] CHARACTERISTICS OF N-CUINSE2/AU SCHOTTKY DIODES
    PRASAD, JJB
    RAO, DK
    SRIDEVI, D
    MAJHI, J
    REDDY, KV
    SOBHANADRI, J
    SOLID-STATE ELECTRONICS, 1985, 28 (12) : 1251 - 1254
  • [23] Electrical transport characteristics of Au/n-GaAs Schottky diodes on n-Ge at low temperatures
    Hudait, MK
    Venkateswarlu, P
    Krupanidhi, SB
    SOLID-STATE ELECTRONICS, 2001, 45 (01) : 133 - 141
  • [24] Deep levels, electrical and optical characteristics in SnTe-doped GaSb Schottky diodes
    Chen, JF
    Chen, NC
    Liu, HS
    JOURNAL OF ELECTRONIC MATERIALS, 1996, 25 (11) : 1790 - 1796
  • [25] ON THE BARRIER HEIGHT OF SCHOTTKY DIODES OF AU ON NORMAL-GASB
    MURAWALA, PA
    ARORA, BM
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1990, 29 (12): : L2434 - L2437
  • [26] ELECTRICAL-PROPERTIES OF AU/N-CDTE SCHOTTKY DIODES
    DHARMADASA, IM
    ROBERTS, GG
    PETTY, MC
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1982, 15 (05) : 901 - 910
  • [27] Effect of interface roughness and morphology on the electrical behaviour of Au/n-GaAs Schottky diodes
    Horváth, ZJ
    Rengevich, OV
    Mamykin, SV
    Dmitruk, NL
    Van Tuyen, V
    Szentpáli, B
    Konakova, RV
    Belyaev, AE
    ASDAM 2000: THIRD INTERNATIONAL EUROCONFERENCE ON ADVANCED SEMICONDUCTOR DEVICES AND MICROSYSTEMS - CONFERENCE PROCEEDINGS, 2000, : 257 - 259
  • [28] On the electrical characteristics of high energy carbon irradiated Au/n-GaAs Schottky Barrier Diodes
    Jayavel, P
    Santhakumar, K
    Ogura, M
    COMPOUND SEMICONDUCTORS 2001, 2002, (170): : 75 - 80
  • [29] Effects of swift heavy ion irradiation on the electrical characteristics of Au/n-GaAs Schottky diodes
    Sharma, A. Tarun
    Shahnawaz
    Kumar, Sandeep
    Katharria, Yashpal S.
    Kanjilal, Dinakar
    APPLIED SURFACE SCIENCE, 2007, 254 (02) : 459 - 463
  • [30] Grain boundary effects on Schottky barrier height of Au/P-polysilicon diodes
    Al Kuhaimi, SA
    RENEWABLE ENERGY, 1998, 14 (1-4) : 165 - 172
12345