Effect of the design and technology factors on electrical characteristics of the Au/Ti-n-GaAs Schottky diodes

被引：0
|
作者：
D. N. Zakharov
V. M. Kalygina
A. V. Netudykhatko
A. V. Panin
机构：
[1] Kuznetsov Siberian Physicotechnical Institute at the Tomsk State University,Institute of Strength Physics and Materials Science, Siberian Division
[2] Research Institute of Semiconductor Devices,undefined
[3] Russian Academy of Sciences,undefined
来源：
Semiconductors | 2006年 / 40卷
关键词：
73.30.+y; 85.30.De; 85.30.Hi;
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学科分类号：
摘要：
Electrical properties of the Au/Ti-n-GaAs Schottky diodes are studied in relation to the production technology. The forward and reverse current-voltage characteristics of the diodes at low electric fields are analyzed on the basis of the mechanism of thermionic emission through the metal-semiconductor barrier. It is assumed that an increase in the reverse currents in the voltage range from 20 to 60 V can be accounted for by the Pool-Frenkel effect. The excess reverse currents at voltages higher than 60 V are caused by the phonon-assisted tunneling via deep states in the depletion region of the semiconductor.
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页码：728 / 733
页数：5
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