共 50 条
- [42] Improved Ti self-aligned silicide technology using high dose Ge pre-amorphization for 0.10 μm CMOS and beyond JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (4B): : 2238 - 2242
- [44] SELF-ALIGNED TITANIUM SILICIDE DEVICE TECHNOLOGY BY NH3 PLASMA ASSISTED THERMAL ANNEALING JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (06): : 1667 - 1673
- [45] CONTROL OF A SELF-ALIGNED W-SILICIDE PROCESS BY ANNEALING AMBIENCE JOURNAL DE PHYSIQUE, 1988, 49 (C-4): : 183 - 186
- [47] Formation of nickel self-aligned silicide by using cyclic deposition method JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2005, 44 (4B): : 2235 - 2239