A self-aligned silicide technology with the Mo/Ti bilayer system

被引：0
|
作者：
Industrial Microelectronics Center, P.O. Box 1084, S-164 21 Kista, Sweden [1 ]
不详 [2 ]
机构：
来源：
Vide: Science, Technique et Applications | 1997年 / 53卷 / 283 SUPPL.期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：116 / 117
相关论文
共 50 条
  • [21] DOPANT DIFFUSION IN SELF-ALIGNED SILICIDE SILICON STRUCTURES
    WITTMER, M
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (8B) : C471 - C471
  • [22] A novel self-aligned process for platinum silicide nanowires
    Zhang, Zhen
    Hellstrom, Per-Erik
    Lu, Jun
    Ostling, Mikael
    Zhang, Shi-Li
    MICROELECTRONIC ENGINEERING, 2006, 83 (11-12) : 2107 - 2111
  • [23] Robust, scalable self-aligned platinum silicide process
    Zhang, Z
    Zhang, SL
    Östling, M
    Lu, J
    APPLIED PHYSICS LETTERS, 2006, 88 (14)
  • [24] Annealing process influence and dopant-silicide interaction in self-aligned NiSi technology
    Ru, GP
    Jiang, YL
    Qu, XP
    Li, BZ
    2004: 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, VOLS 1- 3, PROCEEDINGS, 2004, : 451 - 455
  • [25] JUNCTION LEAKAGE IN TITANIUM SELF-ALIGNED SILICIDE DEVICES
    AMANO, J
    NAUKA, K
    SCOTT, MP
    TURNER, JE
    TSAI, R
    APPLIED PHYSICS LETTERS, 1986, 49 (12) : 737 - 739
  • [26] DOPANT DIFFUSION IN SELF-ALIGNED SILICIDE SILICON STRUCTURES
    WITTMER, M
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (08) : 2049 - 2053
  • [27] Self-aligned nickel-platinum silicide oxidation
    Imbert, B.
    Zoll, S.
    Garnier, P.
    Pernet, B.
    Galpin, D.
    Beneyton, R.
    Juhel, M.
    Mur, P.
    Carron, V.
    Thomas, O.
    MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, 2008, 154 (155-158): : 155 - 158
  • [28] Dopant effects on lateral silicide growth in self-aligned titanium silicide process
    Park, JS
    Byun, JS
    Sohn, DK
    Lee, BH
    Park, JW
    Kim, JJ
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1998, 145 (10) : 3585 - 3589
  • [29] THE APPLICATION OF ION-BEAM MIXING, DOPED SILICIDE, AND RAPID THERMAL-PROCESSING TO SELF-ALIGNED SILICIDE TECHNOLOGY
    KU, YH
    LEE, SK
    KWONG, DL
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1990, 137 (02) : 728 - 740
  • [30] A SELF-ALIGNED SILICIDE TECHNOLOGY USING ION-BEAM MIXING, DOPED SILICIDE, AND RAPID THERMAL-PROCESSING
    KU, YH
    LEE, SK
    KWONG, DL
    CHU, P
    RAPID THERMAL ANNEALING / CHEMICAL VAPOR DEPOSITION AND INTEGRATED PROCESSING, 1989, 146 : 249 - 254
12345