Magnetic-field-induced resonance in a triple-barrier resonant tunnelling diode

被引：0

作者：

Eaves, L. ^{[1
]}

Foster, T.J. ^{[1
]}

Sheard, F.W. ^{[1
]}

Ahmand, S.A. ^{[1
]}

Martin, P.M. ^{[1
]}

Fromhold, T.M. ^{[1
]}

Henini, M. ^{[1
]}

Maude, D.K. ^{[1
]}

Portaal, J.C. ^{[1
]}

机构：

[1] Univ of Nottingham, Nottigham, United Kingdom

来源：

Semiconductor Science and Technology | 1994年 / 9卷 / 5 SUPPL期

关键词：

Calculations - Electron energy levels - Electron resonance - Magnetic field effects - Mathematical techniques - Semiconductor quantum wells - Solid state physics;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Resonant tunnelling through a GaAs-AlAs triple-barrier structure with coupled quantum wells of unequal widths has been studied experimentally. Peaks in the current-voltage characteristic due to tunnelling via the lowest subband of each well were observed. Application of a magnetic field an additional resonance peak appears at a bias voltage between the original resonances. The field-induced peak is interpreted as a double-resonance effect, even though the subbands are not energetically aligned. This interpretation is supported by detailed calculations of current-voltage characteristics using a transfer-matrix approach.

引用

页码：493 / 496

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