Magnetic-field-induced resonance in a triple-barrier resonant tunnelling diode

被引：0
|
作者：
Eaves, L. [1 ]
Foster, T.J. [1 ]
Sheard, F.W. [1 ]
Ahmand, S.A. [1 ]
Martin, P.M. [1 ]
Fromhold, T.M. [1 ]
Henini, M. [1 ]
Maude, D.K. [1 ]
Portaal, J.C. [1 ]
机构：
[1] Univ of Nottingham, Nottigham, United Kingdom
来源：
Semiconductor Science and Technology | 1994年 / 9卷 / 5 SUPPL期
关键词：
Calculations - Electron energy levels - Electron resonance - Magnetic field effects - Mathematical techniques - Semiconductor quantum wells - Solid state physics;
D O I：
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学科分类号：
摘要：
Resonant tunnelling through a GaAs-AlAs triple-barrier structure with coupled quantum wells of unequal widths has been studied experimentally. Peaks in the current-voltage characteristic due to tunnelling via the lowest subband of each well were observed. Application of a magnetic field an additional resonance peak appears at a bias voltage between the original resonances. The field-induced peak is interpreted as a double-resonance effect, even though the subbands are not energetically aligned. This interpretation is supported by detailed calculations of current-voltage characteristics using a transfer-matrix approach.
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页码：493 / 496
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