Quantitative modeling of the current gain at high injection levels in polysilicon emitter contact bipolar transistor at low temperatures

被引：0

作者：

Xiao, Zhixiong ^{[1
]}

Wei, Tongli ^{[1
]}

机构：

[1] Beijing Univ, Beijing, China

来源：

Tien Tzu Hsueh Pao/Acta Electronica Sinica | 1998年 / 26卷 / 02期

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页码：44 / 48

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