Quantitative modeling of the current gain at high injection levels in polysilicon emitter contact bipolar transistor at low temperatures

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作者：
Xiao, Zhixiong [1 ]
Wei, Tongli [1 ]
机构：
[1] Beijing Univ, Beijing, China
来源：
Tien Tzu Hsueh Pao/Acta Electronica Sinica | 1998年 / 26卷 / 02期
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页码：44 / 48
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