Quantitative modeling of the current gain at high injection levels in polysilicon emitter contact bipolar transistor at low temperatures

被引：0

作者：

Xiao, Zhixiong ^{[1
]}

Wei, Tongli ^{[1
]}

机构：

[1] Beijing Univ, Beijing, China

来源：

Tien Tzu Hsueh Pao/Acta Electronica Sinica | 1998年 / 26卷 / 02期

关键词：

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

页码：44 / 48

共 50 条

[1] CURRENT GAIN OF SILICON BIPOLAR-TRANSISTOR WITH POLYSILICON EMITTER CONTACT
MEHTA, SK
ELECTRONICS LETTERS, 1984, 20 (07) : 294 - 295
[2] Quantitative modelling of current gain and cut-off frequency at high injection levels at 77 and 300K in polysilicon emitter contact bipolar transistor
Xiao, ZX
Wei, TL
INTERNATIONAL JOURNAL OF ELECTRONICS, 1997, 82 (05) : 451 - 470
[3] MODEL AND MODELING OF LOW TEMPERATURE CURRENT GAIN OF POLYSILICON EMITTER BIPOLAR TRANSISTORS
黄流兴
魏同立
郑茳
曹俊诚
JournalofElectronics(China), 1994, (03) : 277 - 283
[4] Modification of low-temperature current-gain model for polysilicon emitter bipolar transistor
Su, Jiuling
Chang, Xu
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 1996, 17 (08): : 617 - 621
[5] NOVEL CHARACTERISTICS OF THE POLYSILICON HIGH-LOW-EMITTER (PHL-EMITTER) BIPOLAR-TRANSISTOR HIGH-CURRENT GAIN AND ZERO ACTIVATION-ENERGY
CHANG, KZ
WU, CY
SOLID-STATE ELECTRONICS, 1994, 37 (01) : 93 - 96
[6] Analytical Model and Current Gain Enhancement of Polysilicon-Emitter Contact Bipolar Transistors
Zouari, Abdelaziz
Ben Arab, Abdel
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2008, 55 (11) : 3214 - 3220
[7] Analysis and simulation of the current gain of polysilicon emitter bipolar transistors for low-temperature operation
Huang, LX
Wei, TL
Zheng, JA
INTERNATIONAL JOURNAL OF ELECTRONICS, 1996, 80 (01) : 21 - 33
[8] CURRENT GAIN OF HIGH-LOW JUNCTION EMITTER BIPOLAR-TRANSISTOR STRUCTURE WITH UNIFORMLY DOPED PROFILES
WU, CY
SOLID-STATE ELECTRONICS, 1980, 23 (12) : 1215 - 1221
[9] MODELING OF A NEW HIGH-CURRENT GAIN BIPOLAR-TRANSISTOR WITH N-DOPED HYDROGENATED SILICON EMITTER
BONNAUD, O
VIKTOROVITCH, P
IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION, 1985, 132 (01): : 17 - 22
[10] HIGH-SPEED POLYSILICON EMITTER-BASE BIPOLAR TRANSISTOR.
Park, Hee K.
Boyer, Kirk
Clawson, Carl
Eiden, Greg
Tang, Alex
Yamaguchi, Tad
Sachitano, Jack
Electron device letters, 1986, EDL-7 (12): : 658 - 660

← 1 2 3 4 5 →