Vertical high voltage termination structure for high-resistivity silicon detectors

被引：0
|
作者：
Segal, J.D. [1 ]
Kenney, C.J. [1 ]
Aw, C.H. [1 ]
Parker, S.I. [1 ]
Vilkelis, G. [1 ]
Iwanczyk, J.S. [1 ]
Patt, B.E. [1 ]
Plummer, J. [1 ]
机构：
[1] HPL Inc, Milpitas, United States
来源：
IEEE Transactions on Nuclear Science | 1998年 / 45卷 / 3 pt 1期
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页码：364 / 369
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